The photoluminescence of nitrogen-implanted silicon nitride films
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DOI:
https://doi.org/10.32523/2616-6836-2018-122-1-68-74Abstract
The photoluminescence and electron spin resonance of LPCVD silicon nitride films implanted with nitrogen ions and annealed at 800 and 1200 ◦ C have been investigated. It was shown that rapid thermal annealing for 3 min at 800 ◦ C
results in decreasing photoluminescence signal from un-implanted film while the annealing temperature increase to 1200 ◦ C leads to the enhanced blue-green emission. The PL is completely extinguished by nitrogen implantation due to radiation damage. However, the effect of increasing photoluminescence intensity at blue-green range after annealing at 1200 ◦ C can be amplified by preliminary nitrogen implantation with 1 ∗ 1016 cm −2 fluence. It proves the contribution of amorphous silicon nitride intrinsic
defects (N-centers) to the luminescence at the high-energy spectral range.
