Monosilane SiH4 plasma kinetics generated by e-beam and electrons’ energy distribution impact on silicon chemical vapor deposition

Abstract

monosilane ( SiH4 ) chemical kinetics directly depends on the electrons’ energy distribution as well as from the initial electrons cloud formation by external source of ionization. In the present paper electrons’ energy distribution calculated from Monte Carlo technique coupled with chemical kinetics. The proposed statistical calculations validated by correspondent Boltzmann equation solutions present drastically different picture of chemical kinetics evolution compared with calculations depicted by Maxwell distribution. The electrons transport coefficients are also evaluated in strong electric fields and analyzed with the accent on the rate of useful chemical reactions (directly connected with the formation of chemical vapour deposition controlled and managed by non-Maxwellian electrons energy distribution.