Annealing of dielectric properties of GaAs Crystals Irradiated by Neutrons


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Authors

  • А Русакова
  • А Акилбеков
  • М Жунусова

DOI:

https://doi.org/10.32523/2616-6836-2019-129-4-107-112

Abstract

This article investigated capacitors with dielectrics of silicon and gallium arsenide irradiated with neutrons. The possible influence of various types of contacts (metal -semiconductor) on the capacitive properties of capacitors is analyzed. It is shown that GaAs layers compensated by
radiation defects can be used as insulation of integrated circuit elements

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Published

2022-07-05

How to Cite

Русакова, А., Акилбеков, А., & Жунусова, М. (2022). Annealing of dielectric properties of GaAs Crystals Irradiated by Neutrons. BULLETIN OF THE L.N. GUMILYOV EURASIAN NATIONAL UNIVERSITY. PHYSICS. ASTRONOMY SERIES, 129(4), 107–112. https://doi.org/10.32523/2616-6836-2019-129-4-107-112

Issue

Vol. 129 No. 4 (2019)

Section

Статьи

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