Radiation Detection with Wide- and Ultrawide-Bandgap Semiconductors: Detector Fundamentals and Performance Benchmarks for 4H-SiC, GaN, and β-Ga₂O₃

Abstract

Wide - and ultrawide-bandgap semiconductor materials have been receiving growing attention for the application in radiation detectors for nuclear energy systems and other environments with high levels of radiation. The wide- and ultrawide-bandgap semiconductor materials have the advantages of high breakdown strength, low leakage current, and the ability to operate at elevated temperatures. In this review, the state of the art in the field of radiation detectors based on 4H-SiC, GaN, and β-Ga₂O₃ is discussed, with particular focus on the effect of the intrinsic properties of the semiconductor materials on the performance of the detectors. The parameters of particular importance for the detectors are charge collection efficiency, energy resolution, leakage current, thermal stability, and signal drift.

         Among these materials, the case for 4H-SiC is the most developed, with a significant experimental base for charged particle and neutron detection, including converter-assisted detectors, as well as operation at elevated temperatures. GaN has also been found to have significant potential, especially for Schottky and vertical detectors for charged particle detection. However, its performance is often heavily dependent on the quality of the interface. β-Ga₂O₃, as a relatively new ultrawide bandgap semiconductor, is seen to have significant potential for X-ray detectors and extreme environment operation. Although, many issues regarding its response to irradiation damage and its recovery after exposure are currently under investigation.

         This review aims to compare these three material systems from a common perspective, thereby revealing their current capabilities as well as their most possible areas of application. A comparative summary section and an outlook section have been added to identify the main areas for future work, particularly in terms of standardized benchmarking, defect-informed device optimization, as well as more reliable detectors for nuclear and harsh-environment applications.