About determination of the threshold ionization energy losses for the latent tracks formation in crystalline Si 3 N 4


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Authors

  • А Ибраева
  • А Янсе Ван Вуурен
  • В Скуратов
  • М Здоровец

DOI:

https://doi.org/10.32523/2616-6836-2019-129-4-8-14

Abstract

This work is devoted to determine the threshold value of ionization energy loss Set for formation of latent tracks in polycrystalline silicon nitride based on the analysis of radiation-stimulated amorphization of material. Si 3 N 4 (Al)
specimens were irradiated with 167 MeV and 220 MeV Xe ions with high fluencies (6 × 10 14 and 2 × 10 14 cm −2, respectively). According to cross-section TEM analysis of sample structures the lower boundary of Set has been found at level ˜6.7 keV/nm.

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Published

2022-07-05

How to Cite

Ибраева, А., Янсе Ван Вуурен, А., Скуратов, В., & Здоровец, М. (2022). About determination of the threshold ionization energy losses for the latent tracks formation in crystalline Si 3 N 4. BULLETIN OF THE L.N. GUMILYOV EURASIAN NATIONAL UNIVERSITY. PHYSICS. ASTRONOMY SERIES, 129(4), 8–14. https://doi.org/10.32523/2616-6836-2019-129-4-8-14

Issue

Vol. 129 No. 4 (2019)

Section

Статьи

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